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Performance limits of deep submicron N- and P-channel MOS transistors

โœ Scribed by I. Nedev; O. Dimov; Y. Yanakiev


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
467 KB
Volume
22
Category
Article
ISSN
0026-2692

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## Abstract The modeling of MOS transistors used for RF applications needs the definition of a lumped equivalent circuit where the intrinsic device and series extrinsic resistances are properly evaluated. The model accuracy depends on the extraction precision of each intrinsic lumped element. In or