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Reliability of thermally oxidized SiO2/4H-SiC by conductive atomic force microscopy

✍ Scribed by Fiorenza, Patrick; Raineri, Vito

Book ID: 118116932
Publisher: American Institute of Physics
Year: 2006
Tongue: English
Weight: 403 KB
Volume: 88
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2207991

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