𝔖 Bobbio Scriptorium
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Reliability of silicon power transistors

✍ Scribed by Alfred Marmann

Publisher
Elsevier Science
Year
1976
Tongue
English
Weight
390 KB
Volume
15
Category
Article
ISSN
0026-2714

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πŸ“œ SIMILAR VOLUMES

Silicon power transistor developed
Silicon power transistor developed
πŸ“‚ Article πŸ“… 1957 πŸ› Elsevier Science 🌐 English βš– 68 KB

J. F. I. time it is depressed, has been incorporated on the front panel for manual operation of the pulse generator.

Quasi-two-dimensional simulations of bip
Quasi-two-dimensional simulations of bipolar silicon power transistors
✍ Wolf-Dieter Nowak; Heinrich Schlangenotto πŸ“‚ Article πŸ“… 1985 πŸ› Elsevier Science βš– 256 KB

The collector current distribution of bipolar power transistors at high current densities has been calculated by quasi-two-dimensional device simulations and compared with infrared recombination radiation measurements. Further, modeling results concerning the influence of transistor doping profile a

InGaP/GaAs heterojunction bipolar transi
InGaP/GaAs heterojunction bipolar transistor and RF power amplifier reliability
✍ Liu, Xiang; Yuan, Jiann S.; Liou, Juin J. πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 189 KB

Electrothermal stress on advanced InGaP/GaAs heterojunction bipolar transistors (HBTs) was carried out experimentally. It showed a long-term stress-induced base current instability and a decrease in the DC current gain. A class-AB RF power amplifier (PA) was also considered to study the stress effec