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Relative importance of the Si–Si bond and Si–H bond for the stability of amorphous silicon thin film transistors

✍ Scribed by Wehrspohn, R. B.; Deane, S. C.; French, I. D.; Gale, I.; Hewett, J.; Powell, M. J.; Robertson, J.

Book ID: 121211732
Publisher: American Institute of Physics
Year: 2000
Tongue: English
Weight: 437 KB
Volume: 87
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.371836

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