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Relationship between interface property and energy band alignment of thermally grown SiO2 on 4H-SiC(0001)

✍ Scribed by Hosoi, Takuji; Kirino, Takashi; Mitani, Shuhei; Nakano, Yuki; Nakamura, Takashi; Shimura, Takayoshi; Watanabe, Heiji

Book ID: 120929533
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 601 KB
Volume: 12
Category: Article
ISSN: 1567-1739
DOI: 10.1016/j.cap.2012.04.008

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