Relation between structure, morphology and optical properties of indium sulphide thin films prepared by different vacuum methods

✍ Scribed by Guillén, C.

• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 269 KB
• Volume: 204
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200723092

✦ Synopsis

Abstract

Indium sulphide thin films were synthesized following two different vacuum physical processes, modulated flux deposition and sequential evaporation, with thicknesses ranging between 40 and 250 nm, at temperatures as low as 200 °C. The samples were characterized using X‐ray diffraction, spectrophotometry and atomic force microscopy. All films crystallized in the tetragonal β‐In~2~S~3~ structure, showing small crystallite size and compressive lattice distortion for the thinnest layers, which progress towards larger crystallites and lattice extension when the thickness increases. Such evolution is found to be different for samples prepared by direct or sequential processes. Relations between lattice stress, surface roughness and band gap energy values were analysed for the different layers. It is established that band gap widening is related to compressive strain and low roughness conditions, which are better achieved by modulated flux deposition. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)