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Reflection EXAFS studies of metal-semiconductor interfaces

โœ Scribed by Pathikrit Bandyopadhyay; Bruce A. Bunker


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
135 KB
Volume
158
Category
Article
ISSN
0921-4526

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๐Ÿ“œ SIMILAR VOLUMES


EXAFS studies of interfaces in bilayers
โœ S.M. Heald; H. Chen; G.M. Lamble ๐Ÿ“‚ Article ๐Ÿ“… 1989 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 394 KB

EXAFS is demonstrated to be a useful probe of interface structure. Glancing angle techniques can be used on bilayer samples for cases in which the overlayer iJ less dense than the substrate. It is shown that the anomalous dispersion distortion8 which aflect the EXAFS signal can be accurately removed

Low energy studies of semiconductor inte
โœ D.G. Eshchenko; V.G. Storchak; E. Morenzoni; T. Prokscha; A. Suter; X. Liu; J.K. ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 301 KB