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Reflection electron energy loss spectroscopy during initial stages of Ge growth on Si by molecular beam epitaxy

✍ Scribed by Atwater, Harry A.; Ahn, Channing C.

Book ID: 121261726
Publisher: American Institute of Physics
Year: 1991
Tongue: English
Weight: 759 KB
Volume: 58
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.104685

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