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Reduction of dislocations in InGaAs layer on GaAs using epitaxial lateral overgrowth

✍ Scribed by Kiyoko Kato; Toshihiro Kusunoki; Chisato Takenaka; Toshiyuki Tanahashi; Kazuo Nakajima

Book ID
107790808
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
521 KB
Volume
115
Category
Article
ISSN
0022-0248

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Epitaxial lateral overgrowth of GaN on s
Epitaxial lateral overgrowth of GaN on sapphire substrates using in-situ carbonized photoresist mask
✍ Sang-il Kim; Bumjoon Kim; Samseok Jang; A-young Kim; Jihun Park; Dongjin Byun πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 791 KB

Epitaxial lateral overgrowth (ELO) GaN samples were successfully grown on masked sapphire (0 0 0 1) substrates using an in-situ carbonized photoresist (PR) mask by a metalorganic chemical vapor deposition (MOCVD) method. The PR masks for the ELO process were prepared using conventional lithography i