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Reduced Gate-Leakage Current and Charge Trapping Characteristics of Dysprosium-Incorporated Gate-Oxide n-MOS Devices

✍ Scribed by Tackhwi Lee; Banerjee, S.K.

Book ID: 114620298
Publisher: IEEE
Year: 2011
Tongue: English
Weight: 532 KB
Volume: 58
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2010.2091453

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