Recombination of Impact Ionized Excess Carriers in Tellurium

✍ Scribed by A. Bringer; G. Nimtz

• Publisher: John Wiley and Sons
• Year: 1971
• Tongue: English
• Weight: 368 KB
• Volume: 46
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/pssb.2220460121

✦ Synopsis

Abstract

The recombination time of p‐type tellurium was measured dependent on carrier mobility and carrier density at 77 K. Excess carriers were produced by impact ionization in strong electric fields to achieve large excess carrier concentrations. The recombination of the excess carriers was observed by the help of microwaves, the rise time of the experimental apparatus was less than 5 × 10^−9^ s. The experimental data can be interpreted as the superposition of a slow and a fast exponential decay. The results can be explained by an extended Shockley‐Read model. The energy level and the concentration of the trapping and recombination centers can be deduced from the experimental data.