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Recombination of excess carriers on ionic Cd in Ge

✍ Scribed by M.I. Iglitsin; E.S. Yurova

Publisher
Elsevier Science
Year
1965
Tongue
English
Weight
183 KB
Volume
3
Category
Article
ISSN
0038-1098

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An understanding of the measured excess carrier decay in solar silicon is needed for a meaningful characterization of the material quality by this method. This paper studies the time decay of excess carriers after laser pulse excitation in solar silicon. For this material, which exhibits a high dens