## Abstract The recombination time of pβtype tellurium was measured dependent on carrier mobility and carrier density at 77 K. Excess carriers were produced by impact ionization in strong electric fields to achieve large excess carrier concentrations. The recombination of the excess carriers was ob
β¦ LIBER β¦
Recombination of impact ionized excess carriers in n-type and p-type indiumantimonide
β Scribed by Baumgart, H.-D. ;Nimtz, G. ;Kokoschinegg, P.
- Publisher
- John Wiley and Sons
- Year
- 1972
- Tongue
- English
- Weight
- 302 KB
- Volume
- 12
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Recombination of Impact Ionized Excess C
β
A. Bringer; G. Nimtz
π
Article
π
1971
π
John Wiley and Sons
π
English
β 368 KB
Magnetooptical detection of carrier-dyna
β
S. Hansel; C. Puhle; M.von Ortenberg; E. Huseynov
π
Article
π
2004
π
Elsevier Science
π
English
β 734 KB
Semidestructive and nondestructive operation of single turn coils provides dB=dt > 10 7 T s Γ1 and gives by the transient magnetic field an excellent tool for the study of time delayed thermalisation effects due to magnetic field dependent shifts of energy levels. For 10.6 mm radiation in p-type InS
Impact of nickel contamination on carrie
β
D. Macdonald
π
Article
π
2005
π
Springer
π
English
β 581 KB
Solubility and origin of thermally induc
β
Glinchuk, K. D. ;Litovchenko, N. M. ;Merker, R.
π
Article
π
1975
π
John Wiley and Sons
π
English
β 194 KB
Carrier concentration and mobility in n-
β
F.T.J. Smith
π
Article
π
1971
π
Elsevier Science
π
English
β 262 KB
Hall studies of instabilities occurring
β
E. MΓΌller; D.K. Ferry
π
Article
π
1970
π
Elsevier Science
π
English
β 282 KB