Structure Dependence of Electron Mobilit
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Hoshino, K. ;Someya, T. ;Arakawa, Y.
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Article
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2001
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John Wiley and Sons
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English
β 95 KB
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We have investigated electron Hall mobility of high-quality GaN/AlGaN multiple quantum wells (QWs). Electron mobility was enhanced from 875 to 1600 cm 2 /Vs at room temperature in GaN/Al 0.58 Ga 0.42 N QWs when the number of QWs increased from 1 to 10. Atomic force microscopy analysis shows that the