The absorption properties in hetero-polarization GaN/Al x Ga 1Àx N (x ¼ 0:06) quantum well structures are studied in reflection, photoreflection, and photoluminescence excitation spectroscopy and compared with the results of band structure calculations. Above the energy of the main luminescence tran
✦ LIBER ✦
Second harmonic generation in AlGaN, GaN and AlxGa1–xN/GaN multiple quantum well structures
✍ Scribed by D. Passeri; M.C. Larciprete; A. Belardini; S. Paoloni; A. Passaseo; C. Sibilia; F. Michelotti
- Publisher
- Springer
- Year
- 2004
- Tongue
- English
- Weight
- 325 KB
- Volume
- 79
- Category
- Article
- ISSN
- 0721-7269
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A tailoring proposal for design of the strained quantum well structures, optimized with respect to the intersubband resonant secondorder nonlinear properties, is presented in this article. A genetic-algorithm-based method is used in order to obtain the optimal potential shape, doping concentration a