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Recent knowledge of strength and dislocation mobility in wide band-gap semiconductors

✍ Scribed by I. Yonenaga; Y. Ohno; T. Taishi; Y. Tokumoto


Book ID
103887740
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
223 KB
Volume
404
Category
Article
ISSN
0921-4526

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## Abstract In this paper results of site‐selective spectroscopy of Er^3+^ ions in wide band gap semiconductors, such as cubic and hexagonal GaN, and 6H SiC are presented. Photoluminescence excitation (PLE) spectroscopy was applied to find the Stark splitting pattern of energy levels in the ^4^I~9/