Site-selective spectroscopy of erbium in wide band gap semiconductors

✍ Scribed by Kozanecki, A. ;Glukhanyuk, V. ;Przybylińska, H.

• Book ID: 105364675
• Publisher: John Wiley and Sons
• Year: 2008
• Tongue: English
• Weight: 183 KB
• Volume: 205
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200776718

✦ Synopsis

Abstract

In this paper results of site‐selective spectroscopy of Er^3+^ ions in wide band gap semiconductors, such as cubic and hexagonal GaN, and 6H SiC are presented. Photoluminescence excitation (PLE) spectroscopy was applied to find the Stark splitting pattern of energy levels in the ^4^I~9/2~ manifolds. It is shown that in cubic and hexagonal GaN only one center dominates. In the case of wurtzite GaN it is most probably due to Er occupying a Ga site, whereas in the cubic phase point‐charge model calculations suggest a slightly distorted, T~d~ interstitial site. In 6H SiC three different centers were distinguished. The energy level schemes for the ^4^I~9/2~ and the ground ^4^I~15/2~ states were determined for all three centers, basing on the results of photoluminescence and PLE measurements. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)