Detection of Optically Excited States in Wide-Band-Gap Semiconductors with Tunneling Spectroscopy
β Scribed by Gregory S. Rohrer; Dawn A. Bonnell; Roger H. French
- Book ID
- 110824777
- Publisher
- John Wiley and Sons
- Year
- 1990
- Tongue
- English
- Weight
- 671 KB
- Volume
- 73
- Category
- Article
- ISSN
- 0002-7820
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract In this paper results of siteβselective spectroscopy of Er^3+^ ions in wide band gap semiconductors, such as cubic and hexagonal GaN, and 6H SiC are presented. Photoluminescence excitation (PLE) spectroscopy was applied to find the Stark splitting pattern of energy levels in the ^4^I~9/
The sequential excited-to-excited state resonant tunneling effect was observed in weakly coupled long-period superlattices resulting in additional negative differential conductivity resonances in multistable current-voltage characteristics. The results obtained show the evidence of the highly nonequ