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Recent development of InN RF-MBE growth and its structural and property characterization

✍ Scribed by Yasushi Nanishi; Yoshiki Saito; Tomohiro Yamaguchi; Tsutomu Araki; Takao Miyajima; Hiroyuki Naoi

Publisher
John Wiley and Sons
Year
2004
Tongue
English
Weight
575 KB
Volume
1
Category
Article
ISSN
1862-6351

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Growth and characterization of InGaN by
Growth and characterization of InGaN by RF-MBE
✍ A. Kraus; S. Hammadi; J. Hisek; R. Buß; H. JΓΆnen; H. Bremers; U. Rossow; E. Saka πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 661 KB

In this contribution we report on the growth of coherently strained, pseudomorphic InGaN layers on GaN templates by RF-MBE. Structural properties characterized by HR-XRD exhibit good crystalline quality and homogeneity of the grown layers. The incorporation efficiency of In into the InGaN layer was