We report the synthesis, optical and transport properties of N-deficient InN nanowires (In:N ΒΌ 1:0.82). It is found that these nanowires exhibited a typical metallic conduction behavior over the temperature range from 5 to 300 K, without any sign of the transition from metal to semiconductor. Raman
Correlation among growth conditions, crystal structures and optical properties of InN
β Scribed by H. Naoi; M. Kurouchi; T. Araki; T. Yamaguchi; Y. Nanishi
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 311 KB
- Volume
- 2
- Category
- Article
- ISSN
- 1862-6351
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