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Reassessment of the piezoelectric constant in GaAs by studying the electron transport of high purity MBE-grown GaAs

✍ Scribed by V.W.L. Chin

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
213 KB
Volume
37
Category
Article
ISSN
0038-1101

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A Raman investigation on InP layers grown by Metal Organic Vapour Phase Epitaxy on GaAs (001) substrates, with thicknesses exceeding the critical thickness and ranging from 23 to \(280 \mathrm{~nm}\), is reported. The InP LO phonon shows an increasing frequency blueshift with decreasing layer thickn