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Real-time studies of Ge growth on nanostructured Si substrates

✍ Scribed by P.D. Szkutnik; A. Sgarlata; N. Motta; A. Balzarotti


Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
482 KB
Volume
23
Category
Article
ISSN
0928-4931

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Molecular beam epitaxy was used to grow MnF 2 films on a Si(111) substrate with a thin CaF 2 buffer at room temperature. It was found that films thinner than three molecular layers have a cubic fluorite crystal structure inherited from CaF 2 . The MnF 2 film is coherent to the substrate and has an i