✦ LIBER ✦

Real-time photo-spectroscopic ellipsometry measurement of electric field and composition in semiconductors

✍ Scribed by R.T. Carline; J. Russell; T.J.C. Hosea; P.J.S. Thomas; C. Pickering

Book ID: 114086378
Publisher: Elsevier Science
Year: 1998
Tongue: English
Weight: 148 KB
Volume: 313-314
Category: Article
ISSN: 0040-6090
DOI: 10.1016/s0040-6090(97)00888-2

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Control of etch depth in patterned semic

Control of etch depth in patterned semiconductor substrates using real time spectroscopic ellipsometry

✍ S.-J. Cho; P.G. Snyder; N.J. Ianno; C.M. Herzinger; B. Johs 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 699 KB

Analysis of critical points in semicondu

Analysis of critical points in semiconductor optical functions from in situ and real-time spectroscopic ellipsometry

✍ Hien V. Nguyen; R.W. Collins 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 373 KB

Real time spectroscopic ellipsometry det

Real time spectroscopic ellipsometry determination of the evolution of amorphous semiconductor optical functions, bandgap, and microstructure

✍ Y.M. Li; Ilsin An; H.V. Nguyen; C.R. Wronski; R.W. Collins 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 305 KB

Real-time monitoring and control of epit

Real-time monitoring and control of epitaxial semiconductor growth in a production environment by in situ spectroscopic ellipsometry

✍ B Johs; C Herzinger; J.H Dinan; A Cornfeld; J.D Benson; D Doctor; G Olson; I Fer 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 180 KB

Real-time and spectroscopic ellipsometry

Real-time and spectroscopic ellipsometry of film growth: Application to multilayer systems in plasma and CVD processing of semiconductors

✍ J.B. Theeten 📂 Article 📅 1980 🏛 Elsevier Science ⚖ 69 KB

Analysis of Si1-xGex:H thin films with g

Analysis of Si1-xGex:H thin films with graded composition and structure by real time spectroscopic ellipsometry

✍ Podraza, N. J. ;Li, Jing ;Wronski, C. R. ;Dickey, E. C. ;Horn, M. W. ;Collins, R 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 378 KB

## Abstract Silicon‐germanium (Si~1−__x__~ Ge__~x~__:H) thin films have been prepared by plasma enhanced chemical vapor deposition of SiH~4~ and GeH~4~ and measured during growth using real time spectroscopic ellipsometry. A two‐layer virtual interface analysis has been applied to study the structu