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Reactively sputtered NbN Schottky contacts on GaAs and their thermal stability

✍ Scribed by I Hotový; J Huran; b Š Haščíkb; T Lalinský

Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
299 KB
Volume
50
Category
Article
ISSN
0042-207X

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✦ Synopsis

The thermal stability of physical, chemical, and electrical properties of magnetron-deposited NbN thin films on GaAs were investigated. A variety of characterization methods, including Auger analysis, Rutherford backscattering spectrometry analysis, and Schottky barrier measurement showed that the NbN/GaAs interface remains stable after rapid thermal annealing at 850°C for 10 s for NbN films prepared at a 2 and 5% nitrogen content in working gas mixture. It was found that the best electrical parameters (barrier height 0.77 eV and ideality factor 1.11) of NbN/GaAs Schottky contacts were measured for the highest annealing temperature (900°C, 10 s) and the lowest nitrogen content (2%) in working gas mixture.

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