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Reactive synthesis and characterization of MoSi2SiC using low-pressure plasma deposition and 100% methane

✍ Scribed by D.E. Lawrynowicz; J. Wolfenstine; E.J. Lavernia; S.R. Nutt; D.E. Bailey; A. Sickinger; A.M. Hirt

Book ID
116165241
Publisher
Elsevier Science
Year
1995
Weight
512 KB
Volume
32
Category
Article
ISSN
0956-716X

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## Ε½ . Ε½ . Atomic-layer adsorption of P on Si 100 and Ge 100 at 200-7508C by PH was investigated using an ultraclean 3 Ε½ . low-pressure chemical vapor deposition CVD system. At 3008C, the PH adsorption was suppressed on the H-terminated 3 Si surface, but PH was adsorbed dissociatively on the H-fre