Atomic-layer adsorption of P on Si(100) and Ge(100) by PH3 using an ultraclean low-pressure chemical vapor deposition

✍ Scribed by Yosuke Shimamune; Masao Sakuraba; Takashi Matsuura; Junichi Murota

• Book ID: 104309208
• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 157 KB
• Volume: 162-163
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/s0169-4332(00)00221-x

✦ Synopsis

Ž .

Ž . Atomic-layer adsorption of P on Si 100 and Ge 100 at 200-7508C by PH was investigated using an ultraclean 3 Ž . low-pressure chemical vapor deposition CVD system. At 3008C, the PH adsorption was suppressed on the H-terminated 3 Si surface, but PH was adsorbed dissociatively on the H-free Si surface with saturation tendency to subatomic layer. At 3 450-7508C, the P atom concentration on the Si surface tended to saturate to about two or three atomic layers by exposing Ž . PH with little influence of the carrier gas H or He . When the P-adsorbed Si was kept in Ar and in H at 6508C after PH 3 2 2 3 exposure, the P atom concentration decreased to about one atomic layer by thermal desorption and also by reduction due to hydrogen. On the Ge surface, PH adsorption was suppressed by H-termination at 2008C, P atom concentration saturated to 3 the single atomic layer at 300-4508C. Furthermore, P desorption from the Ge surface at 4508C occurred much faster than that from the Si surface at 6508C, while P bonded to Ge was stable at 3008C.