Post deposition annealing of aluminum oxide deposited by atomic layer deposition using tris(diethylamino)aluminum and water vapor on Si(100)

Atomic-layer adsorption of P on Si(100)

Atomic-layer adsorption of P on Si(100) and Ge(100) by PH3 using an ultraclean low-pressure chemical vapor deposition

✍ Yosuke Shimamune; Masao Sakuraba; Takashi Matsuura; Junichi Murota 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 157 KB

## Ž . Ž . Atomic-layer adsorption of P on Si 100 and Ge 100 at 200-7508C by PH was investigated using an ultraclean 3 Ž . low-pressure chemical vapor deposition CVD system. At 3008C, the PH adsorption was suppressed on the H-terminated 3 Si surface, but PH was adsorbed dissociatively on the H-fre