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Reactions of electronically excited boron atoms. Quenching rate constants and the radiative lifetime of the 4p 2P state

✍ Scribed by Xuefeng Yang; Paul J. Dagdigian

Publisher: Elsevier Science
Year: 1992
Tongue: English
Weight: 674 KB
Volume: 200
Category: Article
ISSN: 0009-2614
DOI: 10.1016/0009-2614(92)80001-r

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✦ Synopsis

Collisional quenching and radiative decay of the 4p 'P level of the boron atom has been studied in a cell experiment, in which B atoms are prepared by 266 nm multiphoton dissociation of BBr, and the 4p aP level is prepared by sequential 2-photon absorp tion through the 3s *S level. A radiative lifetime of 360 + 50 ns is derived for B (4p 2P) by extrapolation of the measured decay rates versus BBrs partial pressure in several Tot-r helium buffer gas. Bimolecular quenching rate constants were also determined for a number of atomic and molecular species from the dependence of the B(4p 'P) decay rate on the quencher gas partial pressure. The quenching rate constants for the molecular species were quite large (* (l-2) x lo-' molecule-' cm' SC'), presumably reflecting the small B (4p *P) ionization potential and the rapid removal of the excited state by chemical reaction.

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