Amorphous Si-N films are synthesised from an NH,/SiH, gas mixture by plasma-enhanced chemical vapour deposition (PECVD) at fixed radio frequency (13.56 MHz) and total gas pressure (3424 Torr). The variable process parameters and their ranges are: (i) substrate temperature, 200-400 "C; (ii) RF power
Reaction synthesis and characterisation of lanthanum silicon nitride
✍ Scribed by Z. Lenčéš; L. Benco; J. Madejová; Y. Zhou; L. Kipsová; K. Hirao
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 802 KB
- Volume
- 28
- Category
- Article
- ISSN
- 0955-2219
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