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Re-crystallization of Mn implanted GaAs by He+ ion irradiation

✍ Scribed by C.H. Chen; H. Niu; C.Y. Cheng; H.H. Hsieh; S.C. Wu

Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 297 KB
Volume: 266
Category: Article
ISSN: 0168-583X
DOI: 10.1016/j.nimb.2008.01.062

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✦ Synopsis

Mn ions were implanted into p-GaAs:Zn substrates at room temperature. Post-annealing was performed using 350 keV He + ion irradiation at a temperature of 150-250 °C. The structure of the films before and after annealing was characterized by X-ray diffraction. The depth profiles of the implanted Mn + were measured by secondary ion mass spectrometry. The results indicated that the Mn + implanted GaAs layer had been epitaxially re-grown without formation of 2nd phase.

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