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Rb- and K-promoted nitridation of cleaved GaAs and InP surfaces at room temperature

✍ Scribed by P. Soukiassian; H.I. Starnberg; T. Kendelewicz


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
287 KB
Volume
56-58
Category
Article
ISSN
0169-4332

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ChemInform Abstract: Wet Chemical Digita
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Wet Chemical Digital Etching of GaAs at Room Temperature. -The new title technique uses H2O2 to form an GaAs oxide layer in a self-limiting process at a constant layer thickness of β‰ˆ 15 . ANG. for soak times from 15 to 120 s. In a second step the oxide layer is removed by an acid (e.g. HCl) without