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Rapid thermal chemical vapor deposition growth of nanometer-thin SiC on silicon

✍ Scribed by A.J. Steckl; J.P. Li

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
736 KB
Volume
216
Category
Article
ISSN
0040-6090

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Cubic silicon carbide (t-SiC) films have been grown epitaxially on silicon-on-sapphire (SOS) substrates by chemical vapor deposition. A fresh layer of silicon is first deposited in situ on the SOS substrate at approximately 1050 Β°C. The silicon layer is then carbonized while being heated to 1360 Β°C.

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## Abstract ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a β€œFull Text” option. The original article is trackable v