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Rapid thermal annealing of InAs/GaAs quantum dots under a GaAs proximity cap

✍ Scribed by Babiński, Adam; Jasiński, J.; Bożek, R.; Szepielow, A.; Baranowski, J. M.


Book ID
121451278
Publisher
American Institute of Physics
Year
2001
Tongue
English
Weight
463 KB
Volume
79
Category
Article
ISSN
0003-6951

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The effect of rapid thermal annealing on InAs quantum dots (QDs) capped with In 0.4 Ga 0.6 As/GaAs layer has been investigated by photoluminescence (PL). An unusual red shift of the PL emission peak has been observed for an annealing temperature (T a ) of 650 -C together with a pronounced improvemen