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Rapid thermal annealing of hot wire chemical-vapor-deposited a-Si:H films: The effect of the film hydrogen content on the crystallization kinetics, surface morphology, and grain growth

✍ Scribed by Mahan, A. H.; Roy, B.; Reedy, R. C.; Readey, D. W.; Ginley, D. S.

Book ID
120733429
Publisher
American Institute of Physics
Year
2006
Tongue
English
Weight
553 KB
Volume
99
Category
Article
ISSN
0021-8979

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