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Rapid thermal annealing effects on atomic layer epitaxially grown Zns:Mn thin films

✍ Scribed by D. Ravichandran; S. Blomquist; D. C. Morton


Publisher
Maney Publishing
Year
1999
Tongue
English
Weight
193 KB
Volume
3
Category
Article
ISSN
1432-8917

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Zn 1-x Cd x O layers were deposited on the sapphire substrate using the radio-frequency magnetron co-sputtering system. The grown Zn 1-x Cd x O layers were carried out in the post-annealing treatment for 1 min at the 800 o C oxygen-ambient by the rapid thermal annealing (RTA) method. X-ray diffracti