Rapid fabrication of highly textured CeO2 cap layer on IBAD tape for YBCO coated conductor

✍ Scribed by Takemi Muroga; Tomonori Watanabe; Seiki Miyata; Hiroyuki Iwai; Yutaka Yamada; Teruo Izumi; Yuh Shiohara; Takeharu Kato; Hirokazu Sasaki; Yoshihiro Sugawara; Tsukasa Hirayama

• Publisher: Elsevier Science
• Year: 2004
• Tongue: English
• Weight: 383 KB
• Volume: 412-414
• Category: Article
• ISSN: 0921-4534
• DOI: 10.1016/j.physc.2004.02.201

✦ Synopsis

We have proposed a self-epitaxy process for CeO 2 cap buffer layer deposition by using PLD in order to improve the deposition rate in the IBAD process. The process is combined with a thin IBAD buffer layer by a short time deposition and a self-epitaxy PLD cap layer by high rate deposition. The materials for both IBAD buffer layer and PLD cap layer were studied in terms of the grain alignment. Gd 2 Zr 2 O 7 (GZO) for the IBAD buffer layer and CeO 2 for the PLD cap layer are the best combination. It was estimated that a deposition time of the combination process could be about onethird of the conventional IBAD process.

A 55 m long PLD-CeO 2 cap layer was fabricated at the tape transfer speed of 5 m/h on an IBAD-GZO tape by a reel to reel process. A PLD-CeO 2 cap layer improved the D/ value of the buffer layer and also the uniformity of the D/ values throughout the whole length. While the D/ values of IBAD-GZO were in the range of 13.9°and 18.8°, those of PLD-CeO 2 cap layer were improved to be in the range of 5.7°and 8.7°.