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Range parameters and annealing behaviour of 250–1500 keV high energy boron and phosphorus implantations into silicon

✍ Scribed by K. Ellmer; A. Mertens; A. Rockoff; J. Röhrich; W.-M. Vysek

Book ID
113282840
Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
465 KB
Volume
62
Category
Article
ISSN
0168-583X

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