Contribution to range statistics of Boron implanted into Silicon at high energies: A. G. K. Lutsch, C. A. B. Ball, F. D. Auret and H. C. Snyman Microelectron. J. 12(2) 25 (1981)

• Publisher: Elsevier Science
• Year: 1983
• Tongue: English
• Weight: 91 KB
• Volume: 14
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/s0026-2692(83)80200-6

✦ Synopsis

electron. J. 12(3) 33 (1981). mrpose of this paper is to review the subject of n and carbon in silicon crystals in terms of: (1) origin and concentration; (2) their effect on the .tion of crystalline defects and the impact of these '. devices; and (3) the industrial trends regarding .~ms related to oxygen and carbon.