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Raman study of Ge and GaP microcrystals

✍ Scribed by S. Hayashi; H. Kanamori

Publisher
Elsevier Science
Year
1983
Weight
302 KB
Volume
117-118
Category
Article
ISSN
0378-4363

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πŸ“œ SIMILAR VOLUMES

Preparation and properties of Ge microcr
Preparation and properties of Ge microcrystals in MgF2 layers
✍ R. Thielsch; H. BΓΆttcher πŸ“‚ Article πŸ“… 1992 πŸ› Elsevier Science 🌐 English βš– 531 KB

Ge particles were successfully incorporated into MgF2 films by the multi source PVD technique. The dependence of the optical band gap energy Eg on Ge concentration in the MgF, matrix was investigated before and after annealing. In as-deposited films a strong increase of Es at low Ge concentrations p