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Raman spectroscopy of macroscopic defects of GaAs grown by molecular beam epitaxy

โœ Scribed by H. S. Jang; H. Y. Cho; S. W. Lee; S.-K. Min; I.-S. Yang; J. Yang

Publisher
Springer
Year
1993
Tongue
English
Weight
503 KB
Volume
56
Category
Article
ISSN
1432-0630

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Raman scattering in InxGa1โˆ’xAs/GaAs supe
Raman scattering in InxGa1โˆ’xAs/GaAs superlattices grown by molecular beam epitaxy
โœ M. Constant; N. Matrullo; A. Lorriaux; R. Fauquembergue; Y. Druelle; J. Di Persi ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 395 KB

The pseudomorphic In x Ga 1 \_ x As/GaAs structures are of particular interest because of the high value of the In X Gal-x As electron mobility and the great conduction band offset leading to good electron confinement at the interface. Raman scattering experiments were carried out to measure the opt