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Raman scattering investigation of Yb : YAG crystals grown by the Czochralski method

✍ Scribed by Y. F. Chen; P. K. Lim; S. J. Lim; Y. J. Yang; L. J. Hu; H. P. Chiang; W. S. Tse


Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
113 KB
Volume
34
Category
Article
ISSN
0377-0486

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Thermal conditions and rotation rate were examined experimentally for obtaining a flat interface growth of high melting-point oxide (Tb 3 Sc x Al 5-x O 12 -TSAG) by the Czochralski method. The critical crystal rotation rate can be significantly reduced, of about twice at low and very low temperature