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Raman scattering in GaP/AlP short-period superlattices grown by gas source molecular beam epitaxy

✍ Scribed by R.K. Soni; H. Asahi; S. Emura; T. Watanabe; K. Asami; S. Gonda


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
280 KB
Volume
60-61
Category
Article
ISSN
0169-4332

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Raman scattering in InxGa1βˆ’xAs/GaAs supe
✍ M. Constant; N. Matrullo; A. Lorriaux; R. Fauquembergue; Y. Druelle; J. Di Persi πŸ“‚ Article πŸ“… 1993 πŸ› Elsevier Science 🌐 English βš– 395 KB

The pseudomorphic In x Ga 1 \_ x As/GaAs structures are of particular interest because of the high value of the In X Gal-x As electron mobility and the great conduction band offset leading to good electron confinement at the interface. Raman scattering experiments were carried out to measure the opt