Characterization of MBE-grown Ga1βxAlxAs
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Hou, Y. T.; Feng, Z. C.; Li, M. F.; Chua, S. J.
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Article
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1999
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John Wiley and Sons
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English
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## Molecular beam epitaxy (MBE)-grown ternary Ga 1-x Al x As films, with Al composition x ranging from 0 to 1 in steps of 0.1, have been studied by Raman scattering at room temperature and at 80 K. The observed broadening and asymmetry of the first-order longitudinal-optical phonon spectra induced