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Radiation source dependence of device performance degradation for 4H-SiC MESFETs

✍ Scribed by H. Ohyama; K. Takakura; K. Uemura; K. Shigaki; T. Kudou; T. Matsumoto; M. Arai; S. Kuboyama; C. Kamezawa; E. Simoen; C. Claeys

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