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Radiation-produced defects in n-GaN

✍ Scribed by V.V. Emtsev; V.Yu. Davydov; V.V. Kozlovskii; G.A. Oganesyan; D.S. Poloskin; A.N. Smirnov; E.A. Tropp; Yu.G. Morozov

Publisher: Elsevier Science
Year: 2007
Tongue: English
Weight: 158 KB
Volume: 401-402
Category: Article
ISSN: 0921-4526
DOI: 10.1016/j.physb.2007.08.176

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✦ Synopsis

Radiation-produced defects in doped and nominally undoped n-GaN with charge carrier concentrations in a range of 4 Â 10 16 cm À3 to about 2 Â 10 18 cm À3 are investigated. Layers of n-GaN are irradiated with fast electrons at 0.9 MeV, 60 Co gamma rays and protons at 150 keV. The production rates of radiation defects in n-GaN are estimated and compared with literature data. Annealing processes of radiation defects in n-GaN in the temperature range 100-700 1C are also discussed. The annealing behavior appears to be complicated. Two temperature intervals, from T ¼ 100 to 400 1C and from T ¼ 500 to 700 1C, are characteristic for modification and annealing processes of radiation-produced defects in n-GaN.

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