Radiation hardness of diamond and silicon sensors compared

✍ Scribed by de Boer, Wim ;Bol, Johannes ;Furgeri, Alex ;Müller, Steffen ;Sander, Christian ;Berdermann, Eleni ;Pomorski, Michal ;Huhtinen, Mika

• Book ID: 105364621
• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 260 KB
• Volume: 204
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200776327

✦ Synopsis

Abstract

The radiation hardness of silicon charged particle sensors is compared with single crystal and polycrystalline diamond sensors, both experimentally and theoretically. It is shown that for Si‐ and C‐sensors, the NIEL hypothesis, which states that the signal loss is proportional to the Non‐Ionizing Energy Loss, is a good approximation to the present data. At incident proton and neutron energies well above 0.1 GeV the radiation damage is dominated by the inelastic cross section, while at non‐relativistic energies the elastic cross section prevails. The smaller inelastic nucleon‐carbon cross section and the light nuclear fragments imply that at high energies diamond is an order of magnitude more radiation hard than silicon, while at energies below 0.1 GeV the difference becomes significantly smaller. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)