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Radiation hardness properties of full-3D active edge silicon sensors

✍ Scribed by C. Da Viá; J. Hasi; C. Kenney; V. Linhart; Sherwood Parker; T. Slavicek; S.J. Watts; P. Bem; T. Horazdovsky; S. Pospisil

Book ID: 103856947
Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 474 KB
Volume: 587
Category: Article
ISSN: 0168-9002
DOI: 10.1016/j.nima.2007.12.027

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The radiation hardness of planar and 3D silicon detectors fabricated on Float-Zone and epitaxial silicon substrates is compared after exposure to neutron equivalent fluences greater than 10 15 cm À2 . Following irradiation, the Signal Efficiency (SE), expressed as the ratio of the maximum signal aft