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Radiation hardness of porous silicon

✍ Scribed by V. V. Ushakov; V. A. Dravin; N. N. Mel’nik; V. A. Karavanskii; E. A. Konstantinova; V. Yu. Timoshenko


Book ID
110119609
Publisher
Springer
Year
1997
Tongue
English
Weight
73 KB
Volume
31
Category
Article
ISSN
1063-7826

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## Abstract The radiation hardness of silicon charged particle sensors is compared with single crystal and polycrystalline diamond sensors, both experimentally and theoretically. It is shown that for Si‐ and C‐sensors, the NIEL hypothesis, which states that the signal loss is proportional to the No