Numerical simulation of radiation damage
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M. Petasecca; F. Moscatelli; D. Passeri; G.U. Pignatel; C. Scarpello
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Article
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2006
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Elsevier Science
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English
โ 158 KB
In the framework of the CERN-RD50 Collaboration, the adoption of p-type substrates has been proposed as a suitable approach to optimize the long-term radiation hardness of silicon detectors. In this work, we present a numerical model for the simulation of radiation damage effects in p-type silicon,