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Radiation damage induced in Si photodiodes by high-temperature neutron irradiation

โœ Scribed by H. Ohyama; K. Takakura; H. Matsuoka; T. Jono; E. Simoen; C. Claeys; J. Uemura; T. Kishikawa

Book ID
110442519
Publisher
Springer US
Year
2003
Tongue
English
Weight
599 KB
Volume
14
Category
Article
ISSN
0957-4522

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Induced lattice defects in InGaAs photod
Induced lattice defects in InGaAs photodiodes by high-temperature electron irradiation
โœ H. Ohyama; K. Kobayashi; J. Vanhellemont; E. Simoen; C. Claeys; K. Takakura; T. ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 181 KB

Results of a detailed study of the effects of high-temperature 2-MeV electron irradiation on the performance degradation of InGaAs photodiodes are presented. The macroscopic device performance will be correlated with the radiation-induced defects observed by deep level transient spectroscopy. It was